Si Multidot FETs for Single-Electron Transfer and Single-Photon Detection

Recently, there have been increasing demands for controlling individual electrons, photons, and dopants in developing nm scale Si devices. Our most recent results on Si single-electron nano-devices will be presented. We have
demonstrated single-electron transfer in random-tunnel-junctions by a cycle of ac gate bias, detection of photons and detection of individual acceptor ions by Si single-hole transistor.