Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

Bature, U.I. and Nawi, I.M. and Khir, M.H.M. and Zahoor, F. and Algamili, A.S. and Hashwan, S.S.B. and Zakariya, M.A. (2022) Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices. Materials, 15 (3).

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Item Type:	Article
Impact Factor:	cited By 0
Depositing User:	Ms Sharifah Fahimah Saiyed Yeop
Date Deposited:	07 Mar 2022 10:25
Last Modified:	07 Mar 2022 10:25
URI:	http://scholars.utp.edu.my/id/eprint/28663

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