Scholarly PublicationZahoor, F. and Zulkifli, T.Z.A. and Khanday, F.A. and Fida, A.A. (2019) Low-power RRAM Device based 1T1R Array Design with CNTFET as Access Device. In: UNSPECIFIED.
Full text not available from this repository.Abstract
A SPICE model of metal oxide based resistive random access memory (RRAM) devices is demonstrated in this paper having bipolar switching characteristics and utilizing carbon nanotube field effect transistor (CNTFET) in a 1T1R configuration. The growth and the dissolution of the conductive filament in the oxide layer is the basis of the switching mechanism in this model. The model has been implemented in HSPICE simulation software for circuit level analysis. Initially, the simulation of memory cell with CNTFETs is carried out and later on 3�3 memory matrix is analyzed. The proposed design shows a reduction in power consumption as compared to RRAM cell utilizing metal oxide semiconductor field effect transistor (MOSFET) in a 1T1R configuration. © 2019 IEEE.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Impact Factor: | cited By 4 |
| Uncontrolled Keywords: | Carbon nanotubes; Energy dissipation; Memory architecture; Metallic compounds; Metals; MOS devices; Oxide semiconductors; Power MOSFET; RRAM; Semiconductor storage; SPICE; Static random access storage; Transistors, Carbon nano-tube field effect transistor (CNTFET); Conductive filaments; Emerging memory technologies; Hspice simulations; Memory cell; Non-volatile memory; Resistive random access memory (rram); Switching mechanism, Carbon nanotube field effect transistors |
| Depositing User: | Ms Sharifah Fahimah Saiyed Yeop |
| Date Deposited: | 19 Aug 2021 08:09 |
| Last Modified: | 19 Aug 2021 08:09 |
| URI: | http://scholars.utp.edu.my/id/eprint/23615 |
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