Scholarly PublicationZulkifli, T.Z.A. and Marzuki, A. and Murad, S.A.Z. (2018) UWB CMOS low noise amplifier for mode 1. Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, 2017-O. pp. 117-120.
Full text not available from this repository.Abstract
This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input reflection coefficient less than -10 dB in frequency range of interest, a noise figure of 4.29 dB at 3.8 GHz, gain flatness of ±0.25 dB, a 1 dB compression point of -17.67 dBm, -6.90 dBm for IIP3 and power dissipation of 4.5 mW excluding the buffer stage. © 2017 IEEE.
| Item Type: | Article |
|---|---|
| Impact Factor: | cited By 0; Conference of 2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2017 ; Conference Date: 31 October 2017 Through 2 November 2017; Conference Code:134541 |
| Uncontrolled Keywords: | Bandpass amplifiers; Broadband amplifiers; Chebyshev filters; CMOS integrated circuits; Microelectronics; Noise figure; Ultra-wideband (UWB), 1dB compression point; CMOS low noise amplifiers; CMOS technology; Frequency ranges; Gain flatness; Inductive degeneration; Input reflection coefficient; Power supply, Low noise amplifiers |
| Departments / MOR / COE: | Research Institutes > Institute for Health Analytics |
| Depositing User: | Mr Ahmad Suhairi Mohamed Lazim |
| Date Deposited: | 08 Aug 2018 02:01 |
| Last Modified: | 06 Mar 2019 01:39 |
| URI: | http://scholars.utp.edu.my/id/eprint/21782 |
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