60 GHz microstrip filter in 0.13μm RF CMOS technology

This paper presents the design of a 60 GHz microstrip filter to be incorporated in an LNA circuit in CMOS at millimeter-wave (mmW) frequencies. The proposed filter is designed using 8-metal layers of 0.13μm Silterra RF CMOS technology with ultra top metal (UTM) as the signal line and metal M1 as the ground plane. The structure was simulated using 3D EM simulation tools, resulting in the insertion loss of 0.00874 dB and input and output return losses of 44.7 and 42.8 dB, respectively at 60 GHz resonant frequency. The filter design is potentially useful as the input and output matching of 50 ω for millimeter-wave (mmW) LNA. © 2016 IEEE.