Comparative study of CoolMOS and MOSFET in high frequency circuit design

N.Z., Yahaya and K.N., Hassan and N.A., Mani and S.S., Sari'at (2008) Comparative study of CoolMOS and MOSFET in high frequency circuit design. In: 2008 IEEE 2nd International Power and Energy Conference, PECon 2008, 1 December 2008 through 3 December 2008, Johor Baharu.

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The aim of this paper is to compare two high power devices namely CoolMOS and MOSFET in high frequency basic inverter circuit. Where inverter can be used in UPS system, obtaining high quality and efficient AC output at the load requires proper selection of driving power switches. Even though MOSFET has already known for its superior in high frequency operation and high power applications, CoolMOS power device could produce better results in lowering total switching loss in the inverter. The study also looks into the comparison of power losses in the output load from switching activity of both devices during their operating cycles. From the experiment, it can be seen that CoolMOS device can produce higher power saving by at least 82% compared to its counterpart, MOSFET. © 2008 IEEE.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: DC generators; Electric equipment; Integrated circuit manufacture; Power supply circuits; Comparative studies; CoolMOS; Driving power; High frequencies; High frequency inverter; High qualities; High-frequency circuit designs; High-frequency operations; High-power applications; High-power devices; Inverter circuits; MOSFET; Operating cycles; Output loads; Power devices; Power loss; Power savings; Switching activities; Switching loss; Ups systems; MOSFET devices
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Departments / MOR / COE: Departments > Electrical & Electronic Engineering
Depositing User: Dr Nor Zaihar Yahaya
Date Deposited: 09 Mar 2010 02:00
Last Modified: 19 Jan 2017 08:26

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