Oxide ion conductivity in doped Ga based perovskite type oxide

Ishihara, Tatsumi and Matsuda, Hideaki and Bustam, Mohamad Azmi and Takita, Yusaku (1996) Oxide ion conductivity in doped Ga based perovskite type oxide. Solid State Ionics , 86-88. pp. 197-201.

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Oxide ion conductivity of Ga based perovskite type oxides, LnGaO, (Ln = Nd, La) and its related oxide, A,Ga,O,
(A = Ba and St) was investigated. Oxide ion transference number is almost I.0 on Sr,Ga,O, or Ba,Ga,O,. However,
electrical conductivity of these A,Ga,O, system oxides was lower than log (a/S cm-‘) = - 3 due to the low solubility of
the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO, and LaGaO; exhibited a high electrical
conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from PO2 = 1 to 1o-2’ atm. In particular, Ca and Mg doped NdGaO, exhibited a high oxide ion conductivity in similar with LaGaO,based oxide.

Item Type: Article
Subjects: T Technology > T Technology (General)
Departments / MOR / COE: Departments > Chemical Engineering
Depositing User: Assoc Prof Dr Mohamad Azmi Bustam @ Khalil
Date Deposited: 04 Jan 2011 00:36
Last Modified: 20 Mar 2017 01:57
URI: http://scholars.utp.edu.my/id/eprint/3799

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